Comparative study of the photoluminescence of InGaP layers grown on GaAs substrates by LPE and MOVPE techniques

We make a comparative study of the luminescent properties of InGaP films grown on GaAs substrates by two different growth techniques: liquid phase epitaxy (LPE) and metal-organic vapor phase epitaxy (MOVPE). The grown InxGa1KxP (xz0.5) films were nearly lattice matched to GaAs and had the same thickness of approximately 0.5 mm. Photoluminescence (PL) measurements were performed in a wide temperature (10–300 K) range for polarization of the emitted radiation along the [011] and 1⁄20 11 directions. Observations suggest that the InxGa1KxP layers in the structures grown by MOVPE present ordering, while in the layers grown by LPE no ordering was observed. q 2005 Elsevier Ltd. All rights reserved.